TESCAN AMBER X 2

Advanced Semiconductor
Delayering

TESCAN AMBER X 2 for Delayering

Uniform
Delayering

Uniform Delayering

Achieve consistent, artifact-free delayering leveraging our tailored Nanoflat Chase and C-maze gas chemistries, optimized for sub-10 nm technology nodes.

Device
Integrity

Device Integrity

Preserve electrical properties with our precise, low kV Plasma FIB milling, employing inert Xe ions for delicate handling.

Failure
Localization

Failure Localization

Streamline defect isolation with our refined in-lens detection, engineered for effective passive voltage contrast imaging.

Delayering
Automation

Delyering Automation

Simplify end-point determination with our intelligent TESCAN DelayeringTM software, automating delayering to the targeted layer.

Electrical
Analysis

Electrical Analysis

Facilitate in-situ verification or characterization of electrical failures using compatible industry-leading nanoprobing solutions.

User
Productivity

User Productivity

Boost operational efficiency for users at all expertise levels with the intuitive TESCAN EssenceTM graphical user interface.

Discover TESCAN AMBER X 2

for Delayering

Semicon Delayering Animation
DOWNLOAD Imina Transistor characterization of a 5nm
DOWNLOAD Imina Low Resistive Defects Localization

The Advantages of TESCAN AMBER X 2 for Delayering

Utilize SEM-Based Nanoprobing for detailed characterization of NMOS and PMOS transistors across various semiconductor nodes, facilitating precise layer targeting for effective delayering.

In-depth SEM-Based Nanoprobing

In-depth SEM-Based Nanoprobing

Leverage sophisticated SEM-Based 
Nanoprobing to accurately 
characterize NMOS and PMOS 
Transistors across a spectrum of 
semiconductor nodes, including
22, 14, 10, and 5 nm.

Targeted Uniform Delayering

Targeted Uniform Delayering

Attain meticulous uniform 
delayering, empowered by 
advanced automation that keenly 
identifies and halts at your 
designated layers within the stack.

Consistent Large-Area Delayering

Consistent Large-Area Delayering

Ensure expansive, uniform delayering over large areas measuring 300 × 300 μm2, utilizing our specialized "drilled" nozzle. 

Questions?
Want a virtual demo?

Our global team is ready to answer questions about TESCAN FIB-SEMs and our solutions for Semiconductors and IC Packaging Failure Analysis.